? 2012 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 800 v v dgr t j = 25 c to 150 c, r gs = 1m 800 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c 37 a i dm t c = 25 c, pulse width limited by t jm 130 a i a t c = 25 c 44a e as t c = 25 c 3.5 j dv/dt i s i dm , v dd v dss , t j 150 c 50 v/ns p d t c = 25 c 780 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c v isol 50/60 hz, rms, t = 1minute 2500 v~ i isol 1ma, t = 1s 3000 v~ m d mounting torque for base plate 1.5/13 nm/lb.in. terminal connection torque 1.3/11.5 nm/lb.in. weight 30 g symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 3ma 800 v v gs(th) v ds = v gs , i d = 8ma 3.5 6.5 v i gss v gs = 30v, v ds = 0v 200 na i dss v ds = v dss , v gs = 0v 50 a t j = 125 c 2.5 ma r ds(on) v gs = 10v, i d = 22a, note 1 190 m hiperfet tm power mosfet q3-class IXFN44N80Q3 v dss = 800v i d25 = 37a r ds(on) 190m t rr 300ns ds100360b(10/12) n-channel enhancement mode fast intrinsic rectifier avalanche rated features z international standard package z low intrinsic gate resistance z minibloc with aluminum nitride isolation z avalanche rated z low package inductance z fast intrinsic rectifier z low r ds(on) and q g advantages z high power density z easy to mount z space savings applications z dc-dc converters z battery chargers z switch-mode and resonant-mode power supplies z dc choppers z temperature and lighting controls minibloc e153432 g d s s g = gate d = drain s = source either source terminal s can be used as the source terminal or the kelvin source (gate return) terminal.
IXFN44N80Q3 ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1. pulse test, t 300 s, duty cycle, d 2%. (m4 screws (4x) supplied) sot-227b (ixfn) outline symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 20v, i d = 22a, note 1 22 37 s c iss 10950 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 957 pf c rss 95 pf r gi gate input resistance 0.20 t d(on) 45 ns t r 60 ns t d(off) 63 ns t f 20 ns q g(on) 185 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 22a 67 nc q gd 83 nc r thjc 0.16 c/w r thcs 0.05 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. i s v gs = 0v 44 a i sm repetitive, pulse width limited by t jm 176 a v sd i f = i s , v gs = 0v, note 1 1.4 v t rr 300 ns q rm 1.8 c i rm 13.4 a resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 22a r g = 1 (external) i f = 22a, -di/dt = 100a/ s v r = 100v, v gs = 0v
? 2012 ixys corporation, all rights reserved IXFN44N80Q3 fig. 1. output characteristics @ t j = 25oc 0 5 10 15 20 25 30 35 40 45 012345678 v ds - volts i d - amperes v gs = 10v 9v 8 v 7 v 6v fig. 2. extended output characteristics @ t j = 25oc 0 10 20 30 40 50 60 70 80 90 100 110 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 10v 7 v 8 v 9 v 6 v fig. 3. output characteristics @ t j = 125oc 0 5 10 15 20 25 30 35 40 45 024681012141618 v ds - volts i d - amperes 6 v 7v v gs = 10v 9v 8v fig. 4. r ds(on) normalized to i d = 22a value vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 44a i d = 22a fig. 5. r ds(on) normalized to i d = 22a value vs. drain current 0.6 1.0 1.4 1.8 2.2 2.6 3.0 0 102030405060708090100 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 5 10 15 20 25 30 35 40 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
IXFN44N80Q3 ixys reserves the right to change limits, test conditions, and dimensions. fig. 7. input admittance 0 10 20 30 40 50 60 70 44.555.566.577.588.5 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 10 20 30 40 50 60 0 10203040506070 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 20 40 60 80 100 120 140 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 40 80 120 160 200 240 q g - nanocoulombs v gs - volts v ds = 400v i d = 22a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 0.1 1 10 100 1000 10 100 1,000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 1ms r ds(on) limit 250s 25s
? 2012 ixys corporation, all rights reserved ixys ref: f_44n80q3(q8-r88)10-10-12 IXFN44N80Q3 fig. 13. maximum transient thermal impedance 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 13. maximum transient thermal impedance aaaaa 0.4
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